IRF7307QPBF mosfet equivalent, power mosfet.
of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
ma.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal i.
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RDS(on) 0.050Ω 0.090Ω
These HEXFET® Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's are a 150°.
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